SKM200GM12T4 ? by semikron rev. 0 ? 22.06.2009 1 semitrans ? 3 gm fast igbt4 modules SKM200GM12T4 features ?v ce(sat) with positive temperature coefficient ? high short circuit capability, self limiting to 6 x icnom ? fast & soft inverse cal diodes ? large clearance (10 mm) and creepage distances (20 mm) ? isolated copper baseplate using dbc technology (direct copper bonding) typical applications ? matrix inverter remarks ? case temperature limited to t c = 125c max, recomm. t op = -40 ... +150c, product rel. results valid for t j = 150 absolute maximum ratings symbol conditions values unit igbt v ces 1200 v i c t j = 175 c t c =25c 314 a t c =80c 242 a i cnom 200 a i crm i crm = 3xi cnom 600 a v ges -20 ... 20 v t psc v cc = 800 v v ge 15 v v ces 1200 v t j = 150 c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 229 a t c =80c 172 a i fnom 200 a i frm i frm = 3xi fnom 600 a i fsm t p = 10 ms, sin 180, t j =25c 990 a t j -40 ... 175 c module i t(rms) 500 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =200a v ge =15v chiplevel t j =25c 1.8 2.05 v t j = 150 c 2.2 2.4 v v ce0 t j =25c 0.8 0.9 v t j = 150 c 0.7 0.8 v r ce v ge =15v t j =25c 5.0 5.8 m ? t j = 150 c 7.5 8.0 m ? v ge(th) v ge =v ce , i c =7.6ma 5 5.8 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma t j = 150 c ma c ies v ce =25v v ge =0v f=1mhz 12.3 n f c oes f=1mhz 0.81 nf c res f=1mhz 0.69 nf q g v ge =- 8 v...+ 15 v 1130 nc r gint t j =25c 3.8 ? t d(on) v cc = 600 v i c =200a v ge =15v r g on =1 ? r g off =1 ? di/dt on = 5500 a/s di/dt off = 2300 a/s t j = 150 c 185 n s t r t j = 150 c 40 ns e on t j = 150 c 21 mj t d(off) t j = 150 c 425 n s t f t j = 150 c 82 ns e off t j = 150 c 20 mj r th(j-c) per igbt 0.14 k/w
SKM200GM12T4 2 rev. 0 ? 22.06.2009 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f =200a v ge =0v chip t j =25c 2.2 2.52 v t j = 150 c 2.15 2.47 v v f0 t j =25c 1.3 1.5 v t j = 150 c 0.9 1.1 v r f t j =25c 4.5 5.1 m ? t j = 150 c 6.3 6.8 m ? i rrm i f =200a di/dt off = 4450 a/s v ge =15v v cc = 600 v t j = 150 c 174 a q rr t j = 150 c 33 c e rr t j = 150 c 13 mj r th(j-c) per diode 0.26 k/w module l ce 15 20 nh r cc'+ee' terminal-chip t c =25c 0.25 m ? t c = 125 c 0.5 m ? r th(c-s) per module 0.02 0.038 k/w m s to heat sink m6 3 5 nm m t to terminals m6 2.5 5 nm nm w 325 g semitrans ? 3 gm fast igbt4 modules SKM200GM12T4 features ?v ce(sat) with positive temperature coefficient ? high short circuit capability, self limiting to 6 x icnom ? fast & soft inverse cal diodes ? large clearance (10 mm) and creepage distances (20 mm) ? isolated copper baseplate using dbc technology (direct copper bonding) typical applications ? matrix inverter remarks ? case temperature limited to t c = 125c max, recomm. t op = -40 ... +150c, product rel. results valid for t j = 150
SKM200GM12T4 ? by semikron rev. 0 ? 22.06.2009 3 fig. 1: typ. output ch aracteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
SKM200GM12T4 4 rev. 0 ? 22.06.2009 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching times vs. gate resistor r g fig. 9: transient thermal impedance fig. 10: cal diode forward characteristic fig. 11: cal diode peak reverse recovery current fig. 12: typ. cal diode peak reverse recovery charge
SKM200GM12T4 ? by semikron rev. 0 ? 22.06.2009 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. semitrans 3 gm
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